Deep trench plasma etching of single crystal silicon using SF6/O2gas mixtures
作者:
Christopher P. D’Emic,
Kevin K. Chan,
Joseph Blum,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 3
页码: 1105-1110
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586085
出版商: American Vacuum Society
关键词: ETCHING;ION BEAMS;SILICON;MONOCRYSTALS;OXYGEN;SULFUR FLUORIDES
数据来源: AIP
摘要:
A new magnetron ion etching (MIE) process has been developed to etch 50 μm deep trenches into single crystal silicon. The optimized SF6/O2gas mixture results in a nearly vertical etch profile with a vertical to horizontal etch rate ratio of 9.4. Similar experiments were carried out on a Drytek reactive ion etching (RIE) system. Results indicate that although the sidewall angle, etch rate ratio, and etch rate of the RIE process for silicon is lower than that of the MIE process, the surfaces of the trench are smoother and more defect‐free due to better substrate cooling. The effects of the processing parameters on the silicon etch rate and anisotropy were explored in order to optimize both the MIE and RIE processes. Both processes were used to fabricate single crystal silicon doughnuts of dimensions 25–50 μm thick, 50 μm inner diameter, and 100–200 μm outer diameter.
点击下载:
PDF
(630KB)
返 回