Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5on InP
作者:
J. Klem,
D. Huang,
H. Morkoc¸,
Y. E. Ihm,
N. Otsuka,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 19
页码: 1364-1366
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97857
出版商: AIP
数据来源: AIP
摘要:
GaAs1−xSbxnearly lattice matched to InP substrates has been grown by molecular beam epitaxy. For a given As and Sb flux, the GaSb mole fraction is shown to be sensitive to the Ga flux rate. Low‐temperature photoluminescence spectra exhibit a dominant emission line at 0.780–0.790 eV with a full width at half‐maximum as narrow as 7.6 meV, which is believed to be the narrowest obtained to date. Optical absorption measurements demonstrate that the band gap of this material is considerably smaller than predicted by the commonly accepted composition/band gap relation.
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