Investigation of the surface structure of GaAs(110) by high energy ion channeling
作者:
H.‐J. Gossmann,
W. M. Gibson,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1984)
卷期:
Volume 2,
issue 3
页码: 343-345
ISSN:0734-211X
年代: 1984
DOI:10.1116/1.582820
出版商: American Vacuum Society
关键词: GaAs
数据来源: AIP
摘要:
The first application of high energy ion channeling for the structure determination of the atomically clean GaAs(110) surface is reported. It is found that the surface Ga and As atoms have small lateral displacements (≤0.1 Å) from ideal bulklike sites, whereas a normal component of the first layer shear vector as large as 0.7 Å is compatible with the experimental data. The implications of these results with respect to current LEED models are discussed.
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