Ag2Te/As2S3: A high‐contrast, top‐surface imaging resist for 193 nm lithography
作者:
Jerome M. Lavine,
Mark J. Buliszak,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 3489-3491
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588785
出版商: American Vacuum Society
关键词: resists;Ag2Te;As2S3
数据来源: AIP
摘要:
At 193 nm, the Ag2Te/As2S3inorganic resist system exhibits many of the characteristics previously observed at longer wavelengths, namely, a contrast of the order of 10 and the edge effect, both of which contribute to the printing of narrow linewidths. We have observed 0.3 micron lines limited by the resolution capability of the optical system and not by the resist. Under pulsed excimer laser excitation, this system exhibits a threshold of the order of 3 mJ/cm2/pulse. The system does not exhibit reciprocity. While images were printed with two 17 ns pulses of 4 mJ/cm2/pulse, images could not be printed with a single pulse as large as 50 mJ/cm2/pulse. This behavior is not explained by our previously developed model.
点击下载:
PDF
(113KB)
返 回