Molecular beam epitaxial growth of high‐quality GaAs on Si using a high‐temperatureinsituannealing process
作者:
Y. C. Kao,
H. Y. Liu,
H. L. Tsai,
W. M. Duncan,
T. S. Kim,
H. Shichijo,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 2
页码: 250-253
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584820
出版商: American Vacuum Society
关键词: GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;SILICON;SORPTIVE PROPERTIES;ANNEALING;THERMAL CYCLING;DISLOCATIONS;STACKING FAULTS;GaAs;Si;(Al,Ga)As
数据来源: AIP
摘要:
In this paper, we report a new process for molecular beam epitaxial (MBE) GaAs‐on‐Si growth. The process involves high‐temperatureinsituGaAs annealing above 850 °C. The unique points in this new approach are: (1) the thermal cycling layers or so‐called thermal strained superlattices (TSL) are inserted in buffer growth and found to be effective in blocking dislocation propagation; (2) a thin Al0.35Ga0.65As cap layer is deposited after GaAs buffer layer growth to prevent the underneath GaAs epitaxial layer from sublimation during annealing. An 850 °CinsituAlGaAs cap annealing (ACA) of the AlGaAs/GaAs buffer layer can eliminate all the twins and stacking faults in the buffer layers and yield high‐quality GaAs film. The bulk GaAs overlayers is grown at normal GaAs/Si growth temperature and is never exposed to a high anneal temperature. High‐quality GaAs/Si layers with surface dislocation densities 1×106cm−2and an x‐ray linewidth of 130 arc s have been achieved.
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