Effect of hydrogenation on misfit dislocations in SiGe/Si structures for photovoltaic applications
作者:
A. Daami,
G. Bremond,
M. Caymax,
J. Poortmans,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 3
页码: 1737-1739
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590045
出版商: American Vacuum Society
关键词: (Si,Ge)
数据来源: AIP
摘要:
ThickSi0.9Ge0.1relaxed layers grown by chemical vapor deposition on Si(100) oriented substrates are investigated by photoluminescence (PL) spectroscopy. Resolved excitonic near-band-gap luminescence is observed in as-grown and hydrogen treated samples. Phonon assisted transitions are also well identified. The effect of hydrogenation is to enhance the luminescence related to the near-band gap. This enhancement is correlated with a quenching in the dislocation related PL especially for the D3–D4 bands and the T band. This indicates that hydrogenation passivates radiative centers inside dislocation cores which are responsible, beside nonradiative channels, for the quenching of SiGe band-gap edge luminescence.
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