Characterization of the Si/GaAs(110) interface by soft x‐ray surface x‐ray absorption fine structure
作者:
M. L. Hasnaoui,
A. M. Flank,
R. Delaunay,
P. Lagarde,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 1
页码: 69-76
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.587988
出版商: American Vacuum Society
关键词: SILICON;GALLIUM ARSENIDES;INTERFACE STRUCTURE;MONOLAYERS;ELECTRON BEAM EVAPORATION;AMBIENT TEMPERATURE;EXAFS;SHORT−RANGE ORDER;Si;GaAs
数据来源: AIP
摘要:
Surface x‐ray absorption fine structure experiments have been carried out on the system Si/GaAs(110) at coverages ranging from 0.8 to around 2 monolayers (ML) and at room temperature. Polarized experiments have allowed us to propose a model for the silicon adsorption site that has the initial silicon atoms sitting just above the middle of the As–As and Ga–Ga bond along the [001] direction. Above one monolayer, silicon atoms begin to be ordered with a siliconlike structure. At thicker coverages (above 3 ML) the silicon layer is amorphous, which permits a determination of the thickness probed by x‐ray absorption using the total electron yield technique.
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