Anomalous photovoltaic effect and negative photoconductivity in thin, amorphous GaAs‐Si films
作者:
Herbert Reuter,
Heinz Schmitt,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 7
页码: 3209-3218
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.358674
出版商: AIP
数据来源: AIP
摘要:
An anomalous photovoltaic effect and negative photoconductivity were observed in obliquely deposited thin, amorphous GaAs, Si, and GaAs‐Si films. A model of theE(r&drarr;,k&drarr;)‐relation of amorphous semiconductors shows that some carriers in the extended states can have negative effective masses. The number of these photocarriers is high if the energetic range of the localized states is broad. This can lead to negative photoconductivity. Additionally, gradients of the densities of carriers with positive mobilities in the localized and with negative mobilities in the extended states can lead to diffusion photovoltages of several hundred volts in a single photocell with a length of 10 mm. ©1995 American Institute of Physics.
点击下载:
PDF
(1429KB)
返 回