Optically switched resonant tunneling diodes
作者:
T. S. Moise,
Y.‐C. Kao,
L. D. Garrett,
J. C. Campbell,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 9
页码: 1104-1106
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113826
出版商: AIP
数据来源: AIP
摘要:
The room‐temperature photoinduced switching of an InGaAs/AlAs resonant‐tunneling diode is demonstrated. When illuminated at an irradiance of greater than 20 W cm−2using 1.3 &mgr;m radiation, the resonant‐tunneling diode switches from a high‐conductance to a low‐conductance electrical state and exhibits a voltage swing of 600 mV. The switching characteristics are reversible and, in the absence of light, the detector returns to its original high conductance operating state. Small‐signal optical measurements performed with the device biased prior to resonance demonstrate a 3 dB bandwidth of ∼1.5 GHz. ©1995 American Institute of Physics.
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