InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy
作者:
H. Temkin,
D. Gershoni,
M. B. Panish,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 25
页码: 1776-1778
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97743
出版商: AIP
数据来源: AIP
摘要:
The quantum confined Stark effect has been studied in InGaAsP/InP rib waveguide structures grown by gas source molecular beam epitaxy. Using 100‐A˚‐wide wells of InGaAs, a room‐temperature exciton shift of about 250 A˚ has been observed for a bias voltage of 6 V. At a wavelength of 1.64 &mgr;m a modulation depth of 35% has been achieved at a frequency of 500 MHz. We show that efficient modulation at shorter wavelength cannot be obtained in structures with thinner ternary wells. Instead, we propose and demonstrate InGaAsP modulators operating at a wavelength as short as 1.3 &mgr;m.
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