Efficient room‐temperature vapor‐phase etching of SiC by the compound dioxygen difluoride (FOOF) has been demonstrated. FOOF was generated using a design based on thermal‐atomization technique which produced gram quantities of the compound per hour. On both poly‐ and epitype silicon carbide at room temperature, about 6% of the FOOF molecules striking the surface reacted to form SiF4and CO. Examination by atomic force microscopy (AFM) showed that the roughness and morphology of the etched surface were virtually indistinguishable from those of the original surface. No residues or anisotropies were present on the etched surface. ©1995 American Institute of Physics.