Reliability of gate oxide grown on nitrogen‐implanted Si substrates
作者:
Chuan Lin,
Anthony I. Chou,
Prasenjit Choudhury,
Jack C. Lee,
Kiran Kumar,
Brian Doyle,
Hamid R. Soleimani,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 24
页码: 3701-3703
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117194
出版商: AIP
数据来源: AIP
摘要:
Direct nitrogen implant into Si substrate prior to gate oxidation has been proposed to grow multiple gate oxide thicknesses on a single wafer. In this letter, we have studied the reliability of gate oxide grown on nitrogen‐implanted Si substrate. The effects of implant doses, sacrificial oxide thicknesses, and gate oxide thicknesses on gate oxide reliability have been investigated. It was found that there is a tradeoff between oxide thickness control and gate oxide reliability. ©1996 American Institute of Physics.
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