The possibility of producing solar cells using rapid thermal processing (RTP) was reported in recent years. This process was applied with good results topn‐solar cells. In this work we used the RTP technique for the metal‐insulator‐semiconductor (MIS) inversion layer cells. Simultaneously with the growth of the tunneling oxide at the front side ap+/p‘‘high‐low’’ junction forms by alloying the Al into Si at the back contact. The efficiencies reached with this process are about 15%. ©1995 American Institute of Physics.