We demonstrate that di- and monohydride desorption peak temperatures are shifted lower for boron-doped films and higher for phosphorus-doped films compared to intrinsic Si(100). This observation is exploited to show that the shifts in di- and monohydride desorption peak temperatures with doping are accompanied by shifts in the growth mode transition temperatures, with one exception which is discussed. This work suggests that dihydrides lead to breakdown of epitaxial growth while monohydrides promote three-dimensional epitaxial growth. ©1997 American Institute of Physics.