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Temperature independent lifetime in InAlAs quantum dots

 

作者: J. Arlett,   F. Yang,   K. Hinzer,   S. Fafard,   Y. Feng,   S. Charbonneau,   R. Leon,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1998)
卷期: Volume 16, issue 2  

页码: 578-581

 

ISSN:1071-1023

 

年代: 1998

 

DOI:10.1116/1.589932

 

出版商: American Vacuum Society

 

关键词: (In,Al)As

 

数据来源: AIP

 

摘要:

Continuous wave and time-resolved photoluminescence (PL) measurements were performed in order to understand the temperature and power dependence of the luminescence from visible quantum dots (QDs). The PL decay rate is found to be independent of temperature up to 100 K, confirming the high quality of the QDs. However, the intensity of the luminescence decays rapidly, which proved to be due to nonradiative recombination in the barriers, preventing the carriers from reaching the QDs. The dependence of the decay rate on incident power was also studied at 4.2 K. Excited state emission was seen at this temperature.

 

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