Mask molecular beam epitaxy has been used to monolithically integrate vertical‐cavity surface‐emitting lasers (VCSELs) emitting at two wavelengths. This technique allows successive selective and nonselective growth in a chamber by using a movable mask. Varying the cavity thickness at selected areas enables the growth of VCSELs spaced 500 &mgr;m apart and emitting at wavelengths 10 nm apart. Both lasers have threshold current densities of 1.3–1.4 kA/cm2, a range comparable to that of typical VCSELs grown by conventional molecular beam epitaxy. ©1995 American Institute of Physics.