Inverse staggered polycrystalline silicon (poly‐Si) and hydrogenated amorphous silicon (a‐Si:H) double structure thin film transistors (TFTs) are fabricated based on the conventionala‐Si:H TFT process for the application to liquid crystal display panels with peripheral driver circuits integration. After depositing a thin (20 nm)a‐Si:H using the plasma chemical vapor deposition technique at 300 °C, Ar+and XeCl (300 mJ/cm2) lasers are irradiated on the peripheral driver circuits areas, and then thicka‐Si:H (200 nm) andn+Si layers are deposited again. Field effect mobilities of 10 and 0.5 cm2/V s are obtained for the laser annealed poly‐Si and thea‐Si:H (without annealing) TFTs, respectively. ©1995 American Institute of Physics.