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Origin of oriented crystal growth of radiantly melted silicon on SiO2

 

作者: D. K. Biegelsen,   L. E. Fennell,   J. C. Zesch,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 5  

页码: 546-548

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95317

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We demonstrate directly that {100} texturing of lamellae in radiantly melted silicon on SiO2derives from precursor seeds in the as‐deposited solid film. The anisotropic interfacial free energy between crystalline silicon and SiO2controls the orientation.

 

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