Pulsed KrF laser annealing can suppress the island structure formation and Ge segregation associated with the interfacial reactions ofNi/Si0.76Ge0.24.For theNi/Si0.76Ge0.24films annealed at an energy density of0.1–0.3 J/cm2nickel germanosilicide associated with the amorphous overlayer was formed, while at energy densities above0.4 J/cm2cellular structures of Ge-deficientSi1−xGexislands surrounded byNi(Si1−xGex)2due to the constitutional supercooling occurred. For the continuousNi(Si1−xGex)films grown at 200 °C, subsequent laser annealing at a higher energy density of0.6–1.0 J/cm2caused transformation into homogeneousNi(Si0.76Ge0.24)2films without island structure and Ge deficiency which readily appeared on furnace annealing at temperatures above 400 °C. At energy densities above1.6 J/cm2the same cellular structures as described above were also noted. ©1997 American Institute of Physics.