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INTERACTION OF LITHIUM WITH OXYGEN AND DEFECTS IN SILICON

 

作者: P. H. Fang,   Y. M. Liu,   J. R. Carter,   R. G. Downing,  

 

期刊: Applied Physics Letters  （AIP Available online 1968）
卷期: Volume 12, issue 3  

页码: 57-58

 

ISSN:0003-6951

 

年代: 1968

 

DOI:10.1063/1.1651897

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Spontaneous annealing was observed at room temperature of the electron irradiation induced defect in lithium diffused oxygen‐rich silicon. Some implications of this observation are discussed.

 

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