Aluminum oxide was implanted with bromine and subsequently annealed at temperatures between 800 and 1500°C in a reducing atmosphere. Changes in the lattice damage and the impurity distribution were monitored by Rutherford backscattering and channeling (RBS-C) techniques. Changes in the topography were monitored by optical and secondary electron microscopy. The implantation resulted in the formation of an “amorphous” surface layer. Upon annealing, the bromine segregated to form bubbles which blistered releasing 90% of the bromine from the Al203matrix.