The temperature dependence of electrical resistivity of Nd1.85Ce0.15CuO4−ywas measured with oxygen partial pressure fixed at 2.08×10−1, 1.8×10−2, 8.1×10−4, and 3.3×10−6atm. The oxygen partial pressure dependence of resistivity indicated that the charge carriers in Nd1.85Ce0.15CuO4−ywere electrons. The temperature dependence of resistivity exhibited a linear metallic behavior at high temperatures and a semiconductorlike behavior at low temperatures, having a minimum at an intermediate temperature. Difficulties are pointed out in obtaining a unified view for the mechanism of normal electrical conduction in Nd1.85Ce0.15CuO4−y.