Local modification of thin SiO2films in a scanning tunneling microscope
作者:
J. Jahanmir,
P. E. West,
P. C. Colter,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 11
页码: 7144-7146
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.344539
出版商: AIP
数据来源: AIP
摘要:
We have used a scanning tunneling microscope to locally modify thin oxide films on silicon. Current‐voltage (I‐V) measurements were performed on these samples and compared with those on ‘‘as‐polished’’ (mechanically and chemically polished by the manufacturer). We found that theI‐Vmeasurements on samples with thin oxide films were nearly symmetric, characteristic of metal‐oxide‐semiconductor structures dominated by interface states. In contrast, we observed band‐bending on the ‘‘as‐polished’’ samples. The thin oxide film directly under the tip was modified by application of a voltage pulse. This change was reflected in theI‐Vmeasurements.
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