Intensity distribution of semiconductor laser emission due to the excitation of satellite modes
作者:
R.Schimpe,
期刊:
IEE Proceedings J (Optoelectronics)
(IET Available online 1985)
卷期:
Volume 132,
issue 2
页码: 146-149
年代: 1985
DOI:10.1049/ip-j.1985.0029
出版商: IEE
数据来源: IET
摘要:
The fluctuations of the lasing mode intensity due to weakly excited satellite modes are discussed, in terms of the probability distribution, for a semiconductor laser with homogeneous gain saturation. The dependence of the intensity distribution on the injection rate and on the gain spectrum shift is investigated.
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