Si/Ge films on laterally structured surfaces: An x‐ray study of conformal roughness
作者:
M. Tolan,
G. Vacca,
S. K. Sinha,
Z. Li,
M. H. Rafailovich,
J. Sokolov,
H. Lorenz,
J. P. Kotthaus,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 2
页码: 191-193
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116456
出版商: AIP
数据来源: AIP
摘要:
X‐ray diffraction measurements in the region of small incidence and exit angles on thin amorphous silicon/germanium films on laterally structured surfaces are performed. From fits of the data we obtain directly how the Fourier components of the substrates propagate through the evaporated films without being influenced by the intrinsic statistical roughness of the interfaces. The results show that a replication factor extracted from a given model can be quantitatively tested with our measurements. ©1996 American Institute of Physics.
点击下载:
PDF
(123KB)
返 回