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Programmable mass-memory based on a voltage variable capacitor utilizing a ferroelectric thin film deposited on single crystal silicon

 

作者: I.P. Lapin,   Z.P. Mastropas,   E.N. Myasnikov,   S.V. Tolstousov,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1994）
卷期: Volume 5, issue 4  

页码: 339-344

 

ISSN:1058-4587

 

年代: 1994

 

DOI:10.1080/10584589408223891

 

出版商: Taylor & Francis Group

 

关键词: Ferroelectric film;mass-memory;injected charge

 

数据来源: Taylor

 

摘要:

An electronically programmable mass-memory is demonstrated with a projected density capability in excess of 4.5.104bits/mm2, which possesses a nondestructive readout. It is based on the principle of a programmable voltage variable capacitor (VARICAP) and utilizes a ferroelectric thin film of (Ba,Sr)TiO3deposited by sputtering on a single crystal Si substrate.

 

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