Improved AlGaInP‐based red (670–690 nm) surface‐emitting lasers with novel C‐doped short‐cavity epitaxial design
作者:
R. P. Schneider,
M. Hagerott Crawford,
K. D. Choquette,
K. L. Lear,
S. P. Kilcoyne,
J. J. Figiel,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 3
页码: 329-331
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115434
出版商: AIP
数据来源: AIP
摘要:
A modified epitaxial design leads to straightforward implementation of short (1&lgr;) optical cavities and the use of C as the solep‐type dopant in AlGaInP/AlGaAs red vertical‐cavity surface‐emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. ©1995 American Institute of Physics.
点击下载:
PDF
(63KB)
返 回