Reduced‐finesse asymmetric Fabry–Pe´rot modulators are presented utilizing partial antireflection coatings (PAR‐ASFP). Nonuniformity in semiconductor layer thicknesses may be corrected for by adjusting the thickness of the partial antireflection layer. Reduced thickness of the semiconductor layers is corrected for byreducingthe thickness of the PAR layer, leading to natural extensions to manufacturing. By correcting the PAR, we obtain greater than 6.7:1 contrast over an entire 2 in. wafer at a single wavelength and drive voltage of 9 V. ©1995 American Institute of Physics.