Characterization of microstructural defects in BF+2‐implanted silicon
作者:
I. W. Wu,
L. J. Chen,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 8
页码: 3032-3038
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335852
出版商: AIP
数据来源: AIP
摘要:
A systematic study on the nature and evolution of the postannealing defects in BF+2‐implanted silicon with implantation doses ranging from 5×1014to 1×1016cm−2is reported. The type, nature, size, distribution, and density of the defects were determined by transmission electron microscopy. Formation mechanisms of the microstructural defects are discussed.
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