首页   按字顺浏览 期刊浏览 卷期浏览 The impact of epitaxial layer design and quality on GaInAs/AlInAs high‐electron‐mobilit...
The impact of epitaxial layer design and quality on GaInAs/AlInAs high‐electron‐mobility transistor performance

 

作者: A. S. Brown,   U. K. Mishra,   J. A. Henige,   M. J. Delaney,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 2  

页码: 678-681

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584389

 

出版商: American Vacuum Society

 

关键词: DESIGN;EPITAXIAL LAYERS;THICKNESS;ELECTRIC CONDUCTIVITY;PERFORMANCE;GAIN;TRANSISTORS;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;INDIUM ARSENIDES;ELECTRICAL PROPERTIES;THIN FILMS;(Ga,In)As;(Al,In)As

 

数据来源: AIP

 

摘要:

Ga0.47In0.53As–Al0.48In0.52As high‐electron mobility transistors (HEMT’s) exhibit high transconductance and gain because of the high conductivities achievable in the structures. The effect of epitaxial layer design (spacer thickness and active channel thickness) on conductivity is examined. Device characteristics are examined as a function of active channel thickness. Reduced output conductance is observed for a 200 Å channel, but with a reduced transconductance.

 

点击下载:  PDF (376KB)



返 回