Current status of direct growth of CdTe and HgCdTe on silicon by molecular‐beam epitaxy
作者:
R. Sporken,
Y. P. Chen,
S. Sivananthan,
M. D. Lange,
J. P. Faurie,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 4
页码: 1405-1409
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.585876
出版商: American Vacuum Society
关键词: CADMIUM TELLURIDES;MERCURY TELLURIDES;TERNARY COMPOUNDS;BINARY COMPOUNDS;MOLECULAR BEAM EPITAXY;N−TYPE CONDUCTORS;DOMAIN STRUCTURE;SOLID−SOLID INTERFACES;X−RAY DIFFRACTION;(Cd,Te);(Hg,Cd,Te)
数据来源: AIP
摘要:
CdTe and HgCdTe can be grown directly on Si(100) substrates by molecular‐beam epitaxy. The layers grow in the (111)B orientation. Single domain films are always obtained on Si(100) 8° off toward [011], whereas single and double domain films were obtained on nominal Si(100). A possible reason for the formation of these domains is discussed based on a microscopic model of the CdTe/Si interface. The structural quality of the layers is determined by double crystal x‐ray rocking curves. The narrowest rocking curves are obtained on single‐domain films grown on nominal Si(100) substrates; a full width at half‐maximum (FWHM) of only 230 arcsec was measured, compared to 460 arcsec on the best layer with two domains. For HgCdTe layers grown on CdTe/Si, rocking curves with 110 arcsec FWHM were measured; these layers aren‐type with electron mobilities above 5×104cm2 V−1 s−1at 23 K for a Cd mol % of 26%.
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