Smooth reactive ion etching of GaAs using a hydrogen plasma pretreatment
作者:
Kent D. Choquette,
R. J. Shul,
A. J. Howard,
D. J. Rieger,
R. S. Freund,
R. C. Wetzel,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 1
页码: 40-42
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.587982
出版商: American Vacuum Society
关键词: GALLIUM ARSENIDES;ETCHING;PLASMA;HYDROGEN;SILICON CHLORIDES;CHEMICAL REACTIONS;ROUGHNESS;TEMPERATURE DEPENDENCE;TEMPERATURE RANGE 0065−0273 K;TEMPERATURE RANGE 0273−0400 K;GaAs
数据来源: AIP
摘要:
Extremely smooth GaAs surfaces are attained after SiCl4reactive ion etching by preparing the surface before etching with hydrogen plasma exposure to selectively remove the native surface oxides. Using this hydrogen plasma pretreatment, the surface morphology after etching is equivalent to that of the original surface since the etching proceeds uniformly through the GaAs without micromasking effects from a nonuniform surface oxide. The beneficial effects of the hydrogen plasma processing are observed in two different reactors and are found to be independent of the platen temperature during etching. Using atomic force microscopy we find an optimized hydrogen plasma process produces an etched surface morphology with an average surface roughness of 0.9–1.5 nm, as compared to the surface roughness of 0.6 nm before etching or as great as 11.8 nm after etching without the hydrogen plasma pretreatment.
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