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Backside‐illuminated InAs1−xSbx‐InAs narrow‐band photodetectors

 

作者: D. T. Cheung,   A. M. Andrews,   E. R. Gertner,   G. M. Williams,   J. E. Clarke,   J. G. Pasko,   J. T. Longo,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 30, issue 11  

页码: 587-589

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89246

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High‐performance backside‐illuminated photodiodes have been fabricated for the first time from InAs1−xSbx‐InAs heterostructures prepared by liquid‐phase‐epitaxy technique. The peak wavelength can be tuned compositionally from 3.1 to over 7.0 &mgr;m at 77 K. The half‐width of the spectral responses as narrow as 1760 A˚ (at 4.0 &mgr;m) have been achieved. Internal quantum efficiencies of 90% and zero‐bias‐resistance–area products of 2×107&OHgr; cm2have been obtained at 77 K.

 

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