Using the extended x‐ray absorption fine structure method, we have studied the local structures around Zn atoms in Zn‐doped GaAs crystal grown by the liquid‐encapsulated Czochralski technique. Zn atoms, whose concentration is about 2.4×1018cm−3, have the first nearest neighbor atoms at a very short distance of about 1.95 A˚ and the second nearest neighbor atoms at a distance of about 3.15 A˚. The Zn atom configuration forms ‘‘interstitialcy’’, not substitutional, tetrahedral, or hexagonal sites. As the Zn concentration increases, however, Zn atoms have a tendency to occupy substitutional sites.