Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities
作者:
J. Talghader,
J. S. Smith,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 3
页码: 335-337
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114204
出版商: AIP
数据来源: AIP
摘要:
The longitudinal optical mode shift with temperature was measured in two vertical cavity surface‐emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 &mgr;m were determined to be (2.67±0.07)×10−4/°C and (1.43±0.07)×10−4/°C, respectively. ©1995 American Institute of Physics.
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