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Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

 

作者: J. Talghader,   J. S. Smith,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 3  

页码: 335-337

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114204

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The longitudinal optical mode shift with temperature was measured in two vertical cavity surface‐emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 &mgr;m were determined to be (2.67±0.07)×10−4/°C and (1.43±0.07)×10−4/°C, respectively. ©1995 American Institute of Physics.

 

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