Performance capabilities of reflectometers and ellipsometers for compositional analysis during AlxGa1−xAs epitaxy
作者:
W. Gilmore,
D. E. Aspnes,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 13
页码: 1617-1619
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113870
出版商: AIP
数据来源: AIP
摘要:
Performance capabilities of reflectometers and ellipsometers for determining near‐surface dielectric properties by virtual‐interface analysis of kinetic data are calculated for the prototypical semiconductor alloy Al0.30Ga0.70As. Measurement of phase as well as amplitude improves relative sensitivities by over an order of magnitude. ©1995 American Institute of Physics.
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