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The common anion rule: An electrochemical contribution

 

作者: Jacques Gautron,   Jean‐Lou Sculfort,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 1  

页码: 79-81

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582920

 

出版商: American Vacuum Society

 

关键词: solutions;aqueous solutions;valence bands;anions;electrochemistry;gallium phosphides;indium phosphides;ternary alloy systems;electronegativity;sodium iodides;ammonia;metal−semiconductor contacts;(Ga,In)P

 

数据来源: AIP

 

摘要:

The electrochemical behavior of III–V ternary GaxIn1‐xP alloys (with 0≤x≤1) is studied in aqueous and nonaqueous media (sodium iodide liquid ammoniate). The energy position, referenced through an electrochemical scale, of the maximum level of the valence band for each of these compounds is nearly constant. These results still show that this position depends mainly on the anion P, through its electronegativity, in accordance with the so‐called common anion rule found with semiconductor–metal junctions.

 

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