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Reflection of low energy hydrogen from carbon at oblique incidence

 

作者: M. Mayer,   W. Eckstein,   B. M. U. Scherzer,  

 

期刊: Journal of Applied Physics  (AIP Available online 1995)
卷期: Volume 77, issue 12  

页码: 6609-6615

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.359071

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The particle reflection coefficient is determined experimentally and by computer simulation for the bombardment of two different kinds of carbon with deuterium at normal and oblique incidence in the energy range from 1 keV down to 33 eV. Highly oriented pyrolytic graphite (HOPG) and EK98 graphites served as targets, the former as an example with a relatively flat surface, the latter with a rough surface topography. The experimental technique is based on the measurement of the trapped amount by nuclear reaction analysis using the reactiond(3He,p)&agr;; protons are detected with a surface barrier detector. It is found that the usual assumption of complete trapping at low fluences is not fulfilled at low energies (≤100 eV). This is demonstrated by measuring the decrease of the implanted amount of deuterium with further bombardment of protons at the same energy. This loss of implanted atoms can be described by an exponential function which can be used to determine the correct trapping coefficient and from this the correct particle reflection coefficient. The experimentally determined particle reflection coefficients for HOPG agree reasonably well with data calculated with the Monte Carlo programTRIM.SP(versionTRVMC); only at the lowest energy of 50 eV the experimental values are somewhat higher at intermediate angles of incidence than the calculated ones. The rough surface of EK98 is investigated with a scanning tunneling microscope. It is found that this surface can be described by a fractal surface of dimension 2.05. For this surface agreement of the experimental values with those calculated with the programVFTRIM(based onTRIM.SP, assuming a fractal surface) is found. ©1995 American Institute of Physics.

 

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