Alloying of Al‐1% Si integrated‐circuit metallization by 5‐s heat pulses at temperatures ranging from 490 to 540 °C was compared to standard 30‐min furnace alloying at 425 °C. Hillocks were present on all furnace‐alloyed samples, but were absent from all heat‐pulse‐alloyed samples. (Al‐Si)/n+Si contact resistances equivalent to those obtained with furnace alloying were obtained for heat‐pulse temperatures ranging from 505 to 525 °C. Diode leakage characteristics equal to those obtained with furnace alloying were obtained for heat‐pulse temperatures up to 520 °C. Effective radiation‐damage annealing was accomplished by a heat pulse in forming gas at 500 °C.