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The effect of nonlinear ion transport on the rate of laser‐induced electrochemical etching of semiconductors

 

作者: H. Grebel,   B. Iskandar,   K. G. Sheppard,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 4  

页码: 1947-1949

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345571

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Based on a nonlinear coupling between the etchant species and the photo‐induced carriers during photoelectrochemical etching of semiconductor surfaces, we propose that an optimum exists for the reaction rate as a function of electrolyte concentration.

 

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