Temperature dependence of photoconductivity and recombination in hydrogenated amorphous silicon
作者:
Jung‐Kee Yoon,
Jin Jang,
Choochon Lee,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 11
页码: 6591-6593
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.342038
出版商: AIP
数据来源: AIP
摘要:
The recombination processes in undoped hydrogenated amorphous silicon under steady‐state illumination have been studied in order to explain the temperature dependences of photoconductivity. The recombinations of free carriers through the exponential tail states and through the Gaussian distributed dangling bond states were calculated in terms of the Shockley–Read theory and the occupation statistics of correlated defects. An additional recombination of trapped electrons and holes in the tail states through the dangling bonds by tunneling should be included in order to explain the experimental data of the activated photoconductivity at low temperatures.
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