Deposition and properties of yttria‐stabilized zirconia thin films using reactive direct current magnetron sputtering
作者:
E. S. Thiele,
L. S. Wang,
T. O. Mason,
S. A. Barnett,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1991)
卷期:
Volume 9,
issue 6
页码: 3054-3060
ISSN:0734-2101
年代: 1991
DOI:10.1116/1.577172
出版商: American Vacuum Society
关键词: YTTRIUM OXIDES;ZIRCONIUM OXIDES;THIN FILMS;IONIC CONDUCTIVITY;OXYGEN IONS;MICROSTRUCTURE;SPUTTERING;MAGNETRONS;(Y2O3),(ZrO2)
数据来源: AIP
摘要:
Yttria‐stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr–Y target in Ar–O2mixtures. Hysteresis was observed as a function of oxygen flow rate f. For a discharge current of 0.4 A and a total pressurePof 5 mTorr, for example, the target oxidized at f>2.3 ml/min, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 ml/min. The deposition rate was 2.7 μm/h in the metallic mode and 0.1 μm/h in the oxide mode. Fully oxidized (Y2O3)0.1(ZrO2)0.9was obtained forf>2.0 ml/min, even in the metallic mode. While films deposited withP=3–20 mTorr were continuous, forP>20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. ForP<3 mTorr, the films delaminated due to excessive compressive stress. X‐ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350 °C. Temperature‐dependent impedance spectroscopy analysis of YSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected for YSZ.
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