We have fabricated InGaAsP gain‐guided laser arrays emitting at 1.3 &mgr;m. These devices have threshold currents in the range 300–400 mA at 30 °C and have been operated to pulsed output powers as high as 400 mW. More than 100 mW of output power has been obtained up to an ambient temperature of 60 °C. The lasers emit in multilongitudinal modes with a far‐field divergence of 20°×35°. A gain‐guided InGaAsP laser array of the type described here can be used in some applications requiring high‐power lasers emitting at 1.3 &mgr;m.