Based on the study on chemical reactivity of Si2H6and CH4toward two different excitation modes (photo and plasma‐photo hybrid), it was suggested that generating pulsed plasma under constant photo irradiation to a mixture of Si2H6and CH4could deposit continuously amorphous superlattices composed of hydrogenated amorphous silicon (a‐Si:H) and hydrogenated amorphous silicon carbide (a‐SiC:H) layers. The periodical structure in the deposited film by the pulsed plasma and photo chemical vapor deposition was verified by the small angle x‐ray diffraction pattern and high resolution scanning electron microscope image. The optical band gap ofa‐Si:H(0.5–25 nm)/a‐SiC:H(5 nm) superlattices deposited by this method showed a blue shift as the well layer (a‐Si:H) thickness decreased.