Radioactive111In-ions were implanted at 400 keV into polycrystalline Al-foils at a maximum concentration of ≤ 10 ppm and a mean depth of 160 nm. In addition, 1016/cm2inert gas ions were implanted partially overlapping with the111In-profile (Xe: 600 keV, Kr: 450 keV, He: 30 keV). Depth profiling of the Xe- or Kr-ions was performed by 900 keV α-Rutherford Backscattering (RBS). Perturbed Angular Correlation (PAC) measurements showed after the inert gas implantation a 40–70% fraction of a well-defined electric field gradient withvQ= 144.4(5) MHz and η = 0.12(2) which agrees with former results for111In-cavity complexes in Al after Ar- and He- irradiations. The fraction depends on the overlap of the implanted In- and inert-gas profiles, the sequence of the ion irradiations, and the heat treatment. The maximum fraction was found after annealing at 200°C. The influence of the111In-correlated damage and the thermal stability of the cavities were investigated.