Liquid phase epitaxy of GaAs from Bi melt was studied for growth temperatures between 670–750○C. The layers were characterized by Van der Pauw and photoluminescence measurements. All epitaxial layers were n‐type and exhibit low compensation and electron mobilities up to 6×104cm2/V s at 77 K. A gradual increase in then‐type doping was observed with growth temperature. Intentional doping of GaAs with Sn leads to a Sn distribution coefficient ∼60 times larger for the Bi melt in comparison to the Ga melt. Extremely low compensation of the Sn‐doped layers (K≤0.1 forNd=2.5×1017cm−3) is obtained.