Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing
作者:
D. K. Sengupta,
T. Horton,
W. Fang,
A. Curtis,
J. Li,
S. L. Chuang,
H. Chen,
M. Feng,
G. E. Stillman,
A. Kar,
J. Mazumder,
L. Li,
H. C. Liu,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 26
页码: 3573-3575
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119237
出版商: AIP
数据来源: AIP
摘要:
The effect of laser annealing on important detector characteristics such as dark current, spectral response, and absolute responsivity is investigated for bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetectors (QWIPs) operating in the 8–12 &mgr;m wavelength regime. A set of experiments was conducted on QWIPs fabricated from both as-grown and laser-annealed multiple-quantum-well structures. Compared to the as-grown structure, the peak spectral response of the laser-annealed structure was shifted to longer wavelengths, though absolute responsivity was decreased by about a factor of two. In addition, over a wide range of bias levels, the laser-annealed QWIPs exhibited a slightly lower dark current compared to the as-grown QWIPs. Thus, the postgrowth control of GaAs/AlGaAs quantum-well composition profiles by laser annealing offers unique opportunities to fine tune various aspects of a QWIP’s response. ©1997 American Institute of Physics.
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