Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy
作者:
J. S. Massa,
G. S. Buller,
A. C. Walker,
G. Horsburgh,
J. T. Mullins,
K. A. Prior,
B. C. Cavenett,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 11
页码: 1346-1348
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113196
出版商: AIP
数据来源: AIP
摘要:
Temperature dependent time‐resolved photoluminescence has been used to study the excess carrier recombination in Zn0.75Cd0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures <100 K radiative excitonic recombination appears to dominate, and the photoluminescence (PL) decay time follows the linear dependence on temperature over the range 50–120 K. At higher temperatures the reduction in PL efficiency and decay time indicate that nonradiative processes associated with the ZnCdSe/ZnSe interfaces dominate the recombination. The results are consistent with theoretical predictions. ©1995 American Institute of Physics.
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