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Optical characterization of molecular beam epitaxial GaAs/AlxGa1−xAs multi‐quantum‐well structures using a very low power, narrow band, tunable pulsed dye laser

 

作者: M. Naganuma,   J. J. Song,   C. H. Chao,   Y. B. Kim,   W. T. Masselink,   H. Morkoç,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 2  

页码: 551-553

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583428

 

出版商: American Vacuum Society

 

关键词: QUANTUM WELL STRUCTURES;PHOTOLUMINESCENCE;EXCITONS;BURIED HETEROSTRUCTURES;MOLECULAR BEAM EPITAXY;LASER RADIATION;PULSED LASERS;HOLES;ENERGY LEVELS;ELECTRONIC STRUCTURE;HIGH−RESOLUTION METHODS;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;GaAs;(Al,Ga)As

 

数据来源: AIP

 

摘要:

High‐resolution pulsed laser‐induced photoluminescence (PL) and PL excitation spectroscopy have been carried out in MBE grown GaAs/AlxGa1−xAs multi‐quantum‐well structures at 5 K. At very low laser power levels, fine structures are observed both in the heavy‐hole and the light‐hole excitonic regions. By combining a selective detection method with PL excitation spectroscopy, energy states buried under a broad spectrum can be separated.

 

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