A shock‐tracking algorithm for surface evolution under reactive‐ion etching
作者:
S. Hamaguchi,
M. Dalvie,
R. T. Farouki,
S. Sethuraman,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 8
页码: 5172-5184
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354282
出版商: AIP
数据来源: AIP
摘要:
A new algorithm that determines the evolution of a surface eroding under reactive‐ion etching is presented. The surface motion is governed by both the Hamilton–Jacobi equation and the entropy condition for a given etch rate. The trajectories of ‘‘shocks’’ and ‘‘rarefaction waves’’ are then directly tracked, and thus this method may be regarded as a generalization of the method of characteristics. This allows slope discontinuities to be accurately calculated without artificial diffusion. The algorithm is compared with ‘‘geometric’’ surface evolution methods, such as the line‐segment method.
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